DAP202UT106 Switching diode array with common anode configuration. Rated for 80V reverse voltage and 100mA average rectified forward current in a UMD3 surface mount package.
Mfr Part #:

DAP202UT106

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
Switching diode array with common anode configuration. Rated for 80V reverse voltage and 100mA average rectified forward current in a UMD3 surface mount package.
Total Stock: 321 pcs
$ Price Range: $0.05 - $0.06

DAP202UT106 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
271 pcs
271 pcs On Request 1 On Request On Request 09+ On Request On Request
Non-Authorised Inventory information
50 pcs
50 pcs On Request 1 On Request On Request 16+ On Request On Request

DAP202UT106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Average Rectified Forward Current
Capacitance Between Terminals
Current
Diode Configuration
Forward Current
Marking Code
Mounting Type
Operating Temperature
Peak Forward Surge Current
Power Dissipation
Reel Size
Reverse Recovery Time (trr)
Reverse Voltage
Speed
Standard Package Quantity
Storage Temperature Range
Supplier Device Package
Tape & Reel
Tape Width
Taping Code
Technology
Voltage

DAP202UT106 Description

Short technical summary and product information.

The DAP202UT106 is a high-speed switching diode array from ROHM Semiconductor, featuring a common anode configuration of two diodes. It is designed for applications requiring fast switching with a reverse recovery time of 4 ns. The device is rated for a maximum reverse voltage of 80 V and an average rectified forward current of 100 mA per diode, with a peak forward surge current capability of 4000 mA (1 μs pulse).

 

This diode array utilizes epitaxial planar technology, ensuring high reliability and consistent performance. The forward voltage is typically 1.2 V at 100 mA, and reverse current is limited to 0.1 μA at 70 V. With a maximum power dissipation of 200 mW and an operating junction temperature up to 150°C, it is suitable for various high-speed switching circuits.

 

The device is housed in a compact SC-70 (SOT-323) surface mount package, also known as UMD3, making it ideal for space-constrained designs. It is supplied in tape and reel packaging with 3000 pieces per reel, compatible with automated assembly processes. The marking code is 'P'.

DAP202UT106 Quick Information

Product Type: Switching Diode Array
Canonical Name: DAP202UT106 Switching Diode Array (Common Anode, 80V, 100mA)
Subcategory: High Speed Switching Diode Array

DAP202UT106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

DAP202UT106 Estimated Pricing

Qty Low High
3,000+ $0.06 $0.06
6,000+ $0.06 $0.06
9,000+ $0.05 $0.05
15,000+ $0.05 $0.05
21,000+ $0.05 $0.05
30,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

DAP202UT106 Features

  • Common anode dual diode configuration.
  • Fast reverse recovery time of 4 ns.
  • Rated for 80 V reverse voltage.
  • Surface mount SC-70 (UMD3) package.
  • Epitaxial planar technology for reliability.

DAP202UT106 Applications

  • High-speed switching circuits in consumer electronics.
  • Signal rectification in portable devices.
  • Protection clamping in low-voltage applications.
  • General purpose diode array for space-constrained PCBs.

DAP202UT106 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the DAP202UT106?

80 V.

What is the average rectified forward current?

100 mA per diode.

What is the forward voltage at 100 mA?

Maximum 1.2 V.

What is the reverse recovery time?

4 ns maximum under test conditions (VR=6V, IF=5mA, RL=50Ω).

What package does the DAP202UT106 come in?

SC-70 (SOT-323) also known as UMD3.

What is the peak forward surge current capability?

4000 mA for a 1 μs pulse.

What is the operating temperature range?

Maximum junction temperature 150°C, storage temperature -55°C to 150°C.

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