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DAN222T1G Common cathode dual switching diode rated for 80V reverse voltage and 100mA forward current. Features ultra-fast 4ns reverse recovery time in a compact SC-75 surface mount package.
Mfr Part #:

DAN222T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
Common cathode dual switching diode rated for 80V reverse voltage and 100mA forward current. Features ultra-fast 4ns reverse recovery time in a compact SC-75 surface mount package.
Total Stock: 370,020 pcs

DAN222T1G Available from 3 distributors

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333,000 pcs
333000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
31,020 pcs
31020 pcs On Request 1 On Request On Request On Request On Request On Request
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6,000 pcs
6000 pcs On Request 1 On Request On Request 20+ On Request On Request

DAN222T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Diode Capacitance
Diode Configuration
Forward Current (DC)
Forward Voltage
Halogen Free
Junction Temperature Maximum
Mounting Type
Operating Temperature
Package / Case
Package Type
Peak Forward Current
Peak Forward Surge Current
Power Dissipation
Reverse Breakdown Voltage
Reverse Leakage Current
Reverse Recovery Time
Reverse Recovery Time (trr)
Reverse Voltage (Maximum)
Speed
Speed Rating
Storage Temperature Range
Supplier Device Package
Supplier Package
Technology
Voltage

DAN222T1G Description

Short technical summary and product information.

The DAN222T1G is a Common Cathode Silicon Epitaxial Planar Dual Diode designed for ultra high speed switching applications. It is housed in the SOT-416/SC-75 package, ideal for low power surface mount applications where board space is at a premium.

 

Key electrical ratings include a maximum reverse voltage of 80 V, forward current of 100 mA DC (300 mA peak, 2 A surge), and a forward voltage of 1.2 V at 100 mA. The device features a fast reverse recovery time of 4 ns and low typical diode capacitance of 3.5 pF, making it suitable for high-speed switching circuits.

 

The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It offers a maximum power dissipation of 150 mW and operates over a junction temperature range up to 150°C with storage from -55 to +150°C.

DAN222T1G Quick Information

Product Type: Dual Switching Diode
Canonical Name: DAN222T1G - Common Cathode Silicon Dual Switching Diode
Subcategory: Switching Diodes

DAN222T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

DAN222T1G Features

  • 80V maximum reverse voltage rating.
  • 100mA forward current, 300mA peak.
  • Ultra-fast 4ns reverse recovery time.
  • Low 3.5pF typical diode capacitance.
  • SC-75 surface mount package.

DAN222T1G Applications

  • Ultra high speed switching circuits.
  • Low power surface mount applications.
  • High speed switching in portable devices.
  • General purpose switching and clamping.
  • Automotive applications with NSV variant.

DAN222T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the DAN222T1G?

80 V.

What is the maximum forward current of the DAN222T1G?

100 mA DC, 300 mA peak, 2 A surge.

What is the forward voltage drop of the DAN222T1G?

1.2 V maximum at 100 mA forward current.

What is the reverse recovery time of the DAN222T1G?

4 ns maximum under test conditions (IF=5 mA, VR=6 V, RL=100 Ω, Irr=0.1 IR).

What package is the DAN222T1G available in?

SC-75 (SOT-416) surface mount package.

What is the operating temperature range of the DAN222T1G?

Junction temperature maximum 150°C, storage temperature range -55 to +150°C.

What is the typical diode capacitance of the DAN222T1G?

3.5 pF typical at VR=6 V, f=1 MHz.

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