D45VH10G Complementary silicon PNP power transistor designed for high-speed switching. Rated for 80 V collector-emitter voltage and 15 A continuous collector current.
Mfr Part #:

D45VH10G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Complementary silicon PNP power transistor designed for high-speed switching. Rated for 80 V collector-emitter voltage and 15 A continuous collector current.
✓ Total Stock: 27,713 pcs
$ Price Range: $0.71 - $1.77

D45VH10G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
26,170 pcs
26170 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,543 pcs
1543 pcs On Request 1 On Request On Request On Request On Request On Request

D45VH10G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

D45VH10G Description

Short technical summary and product information.

The D45VH10G from ON Semiconductor is a complementary silicon PNP power transistor optimized for high-speed switching applications such as switching regulators and high frequency inverters. It features a maximum collector-emitter voltage of 80 V, a continuous collector current of 15 A (20 A peak), and a power dissipation of 83 W at 25°C case temperature.

 

Key electrical characteristics include a DC current gain (hFE) of 35 minimum at Ic=2A, Vce=1V, and a low collector-emitter saturation voltage of 1 V maximum at Ic=8A, Ib=0.8A. The device has a typical transition frequency of 50 MHz and an operating junction temperature range of -55°C to 150°C.

 

The transistor is housed in a standard TO-220-3 through-hole package with Pb-free plating. It is RoHS compliant and supplied in rails of 50 units. Thermal resistance from junction to case is 1.5°C/W, and from junction to ambient is 62.5°C/W, facilitating heat sink design for high-power applications.

D45VH10G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: D45VH10
Canonical Name: D45VH10G PNP Bipolar Power Transistor
Subcategory: PNP Bipolar Power Transistor

D45VH10G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

D45VH10G Estimated Pricing

Qty Low High
1+ $1.77 $1.77
10+ $0.88 $0.88
100+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

D45VH10G Features

  • Rated for 80 V collector-emitter voltage.
  • Continuous collector current of 15 A.
  • Fast switching speed for power circuits.
  • Pb-free and RoHS compliant package.
  • Standard TO-220 through-hole mounting.

D45VH10G Applications

  • Used in switching regulators and inverters.
  • Suitable for high-power switching circuit drivers.
  • Complementary NPN/PNP pair simplifies design.
  • Ideal for high frequency power conversion.

D45VH10G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the D45VH10G?

80 V (VCEO) and 100 V (VCEV with VBE off).

What is the package type for this transistor?

TO-220-3 through-hole package (Supplier Device Package: TO-220).

What is the operating junction temperature range?

-55°C to 150°C.

Is the D45VH10G RoHS compliant?

Yes, the datasheet states Pb-Free and RoHS compliant.

What is the maximum continuous collector current?

15 A (DC) and 20 A peak (pulse width ≤6ms, duty cycle ≤50%).

What is the power dissipation rating?

83 W at TC=25°C with derating of 0.67 W/°C above 25°C.

Does this transistor have a complementary NPN part?

Yes, the complementary NPN part is the D44VH10G.

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