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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,120 pcs
|
1120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
506 pcs
|
506 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Max @ Ib=0.8A, Ic=8A) | |
| Collector Capacitance | |
| Collector Current (Maximum @ Peak (Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ VCE=1 V, IC=2 A) | |
| Emitter-Base Voltage | |
| Frequency | |
| Maximum Lead Temperature for Soldering | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation (Maximum @ Tc=25 °C) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The D45H11G is a PNP silicon power transistor designed for general-purpose power amplification and switching applications. It features a maximum collector-emitter voltage (VCEO) of 80V and can handle a continuous collector current of 10A, with peak current capability up to 20A under pulsed conditions (pulse width ≤6.0ms, duty cycle ≤50%).
With a total power dissipation of 70W at case temperature 25°C (derated to 2.0W at ambient 25°C), the device offers a low collector-emitter saturation voltage of 1.0V maximum at Ic=8A and Ib=0.4A, contributing to efficient operation. The DC current gain (hFE) is a minimum of 60 at Vce=1V, Ic=2A, and 40 at Vce=1V, Ic=4A.
The transistor is packaged in a TO-220-3 through-hole case (supplier device package TO-220) and is supplied in rails of 50 units. It is Pb-Free and RoHS compliant, making it suitable for environmentally conscious designs. The operating junction temperature range is -55°C to 150°C, with a junction-to-case thermal resistance of 1.8°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
| 10+ | $0.87 | $0.87 |
| 100+ | $0.66 | $0.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80V.
The continuous collector current rating is 10A, with a peak current of 20A under pulsed conditions (pulse width ≤6.0ms, duty cycle ≤50%).
The D45H11G is available in a TO-220-3 through-hole package (supplier device package TO-220).
The operating and storage junction temperature range is -55°C to 150°C.
Yes, the D45H11G is RoHS compliant and Pb-Free as stated in the datasheet.
The total power dissipation is 70W at case temperature 25°C, and 2.0W at ambient temperature 25°C.
The minimum hFE is 60 at Vce=1V, Ic=2A, and 40 at Vce=1V, Ic=4A.