| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Medical Grade | |
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The D44VH10 is an NPN silicon power transistor from On Semiconductor, designed for high-speed switching applications such as switching regulators and high frequency inverters. It is also well-suited as a driver for high power switching circuits.
Key electrical specifications include a minimum collector-emitter breakdown voltage (VCEO) of 80V, a maximum continuous collector current of 15A (20A peak with pulse width ≤6ms, duty cycle ≤50%), and a maximum power dissipation of 83W at case temperature 25°C. The device features low collector-emitter saturation voltage (400mV max at Ib=400mA, Ic=8A) and a DC current gain (hFE) of minimum 35 at Ic=2A, Vce=1V.
The transistor is housed in a TO-220-3 through-hole package with a junction-to-case thermal resistance of 1.5°C/W. It is Pb-Free and RoHS3 compliant, making it suitable for environmentally conscious designs.
80V minimum.
TO-220-3 through-hole package.
-55°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free.
15A continuous, 20A peak (pulse width ≤6ms, duty cycle ≤50%).
83W at case temperature 25°C.
Minimum 35 at Ic=2A, Vce=1V; minimum 20 at Ic=4A, Vce=1V.