D44H11G NPN bipolar transistor with 80V collector-emitter breakdown voltage and 10A continuous current rating. Packaged in a TO-220-3 through-hole package.
Mfr Part #:

D44H11G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor with 80V collector-emitter breakdown voltage and 10A continuous current rating. Packaged in a TO-220-3 through-hole package.
Total Stock: 15,269 pcs
$ Price Range: $1.11 - $1.47

D44H11G Available from 8 distributors

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Non-Authorised

D44H11G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (Maximum @ IB=0.8A, IC=8A)
Collector Capacitance (Maximum @ VCB=10V, f=1MHz)
Collector Current (Maximum @ Pulse Width <= 6 ms, Duty Cycle <= 50%)
Collector Cutoff Current (Maximum @ VCE=Rated VCEO, VBE=0)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ VCE=1 V, IC=2 A)
Emitter Cutoff Current (Maximum @ VEB=5V)
Emitter-Base Voltage (Maximum)
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Standard Package Quantity
Supplier Device Package
Tape & Reel
Thermal Resistance Junction To Case (Maximum)
Thermal Resistance, Junction-to-Ambient (Maximum)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

D44H11G Description

Short technical summary and product information.

The D44H11G is an NPN silicon power transistor from On Semiconductor, part of the D44H series. It features a minimum collector-emitter sustaining voltage (VCEO) of 80V and a maximum continuous collector current of 10A, with a peak current rating of 20A under pulse conditions. DC current gain (hFE) is specified as 60 minimum at 2A and 40 minimum at 4A. The collector-emitter saturation voltage is 1V maximum at 8A collector current and 0.4A base current, and the base-emitter saturation voltage is 1.5V maximum at 8A/0.8A. The device offers a transition frequency of 50 MHz and is capable of dissipating up to 70W when the case temperature is held at 25°C, with a junction-to-case thermal resistance of 1.8°C/W. The operating junction temperature ranges from -55°C to 150°C. Packaged in a TO-220-3 through-hole case, it is supplied in rails of 50 units. The device is Pb-Free and RoHS3 compliant, making it suitable for general-purpose power amplification and switching applications such as switching regulators, converters, and power amplifiers.

D44H11G Quick Information

Product Type: NPN Bipolar Transistor
Series: D44H
Canonical Name: NPN Bipolar Transistor, 80V VCEO, 10A IC, TO-220-3
Subcategory: Single Bipolar Transistor

D44H11G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

D44H11G Estimated Pricing

Qty Low High
1+ $1.47 $1.47
10+ $1.24 $1.24
100+ $1.11 $1.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

D44H11G Features

  • NPN silicon power transistor rated 80V/10A.
  • Low collector-emitter saturation voltage of 1V.
  • High DC current gain of 60 at 2A.
  • TO-220-3 through-hole package.
  • Pb-Free and RoHS3 compliant.

D44H11G Applications

  • Used in power switching regulator circuits.
  • Suitable for output stages in power amplifiers.
  • Ideal for DC-DC converter driver stages.

D44H11G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the D44H11G?

80V minimum (VCEO).

What package is the D44H11G available in?

TO-220-3 through-hole package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the D44H11G RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free.

What is the maximum continuous collector current?

10A continuous, 20A peak.

What is the minimum DC current gain at 2A?

60 minimum at VCE=1V, IC=2A.

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