| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| SVHC Present |
The D3205 is a high-performance N-channel enhancement mode power MOSFET manufactured by Microchip Technology. It utilizes advanced trench technology for excellent on-resistance and low gate charge characteristics. With a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 120A, this MOSFET is suitable for demanding power applications.
Key electrical specifications include a typical drain-source on-resistance (RDS(on)) of 5mΩ at 40A and a gate threshold voltage (VGS(th)) between 2V and 4V. The device offers fast switching capabilities with a typical turn-on delay time of 20nS and a total gate charge (Qg) of 66.34nC.
This MOSFET is available in a TO-220 package, making it suitable for through-hole mounting. Its robust design and specifications make it ideal for use in switching power supplies, inverter power management systems, power tool controls, automotive electronics, and UPS applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The D3205 has a maximum drain-source voltage of 60V.
The D3205 can handle a continuous drain current of 120A.
The typical drain-source on-resistance for the D3205 is 5mΩ at 40A.
The D3205 is available in a TO-220 package.
The D3205 is used in switching power supplies, inverter power management systems, power tool controls, automotive electronics, and UPS applications.