| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TE Connectivity D3205 is an N-channel enhancement mode Power MOSFET featuring advanced trench technology for excellent RDS(on) and low gate charge. It is rated for a Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 120A.
Key electrical characteristics include a typical Drain-Source On-Resistance (RDS(on)) of 5mΩ at 40A and a Gate threshold voltage (VGS(th)) of 2V. The MOSFET also exhibits low gate charge and fast switching times, with a total gate charge (Qg) of 66.34nC.
This Power MOSFET is suitable for various applications including switching power supplies, inverter power management systems, power tool control, and automotive electronics. It operates within a junction temperature range of -55°C to 175°C and is available in TO-220C, TO-220F, TO-262, and TO-263 packages.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.00 | $2.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The D3205 has a maximum continuous drain current of 120A.
The typical drain-source on-resistance is 5mΩ at 40A.
The operating junction temperature range is -55°C to 175°C.
The D3205 is used in switching power supplies, inverter power management systems, power tool control, and automotive electronics applications.