| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The QD2125A-2 from Texas Instruments is a standard Static Random-Access Memory (SRAM) device. This NMOS technology component offers a memory organization of 1K x 1, providing a total density of 1024 bits. It operates asynchronously with a maximum access time of 70ns, making it suitable for various general-purpose memory applications.
The QD2125A-2 is housed in a 16-pin Ceramic Dual In-line Package (CDIP) with through-hole mounting. It operates within a supply voltage range of 4.75V to 5.25V and supports 3-state output characteristics. The device is designed for industrial sectors requiring reliable memory solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The D2125A-2 is organized as 1K words by 1 bit (1024 x 1).
The maximum access time is 70 ns.
The operating temperature range is 0°C to 75°C.
The D2125A-2 is available in a CDIP16 (ceramic dual-in-line) package with 16 pins.
The nominal supply voltage is 5V, with a range of 4.75V to 5.25V.
The D2125A-2 uses NMOS technology.