D0865C5

The Infineon D0865C5 is a 5th Generation thinQ!™ SiC Schottky Diode designed for high-performance power applications. Utilizing revolutionary Silicon Carbide material, this diode provides benchmark switching behavior with no reverse recovery and temperature-independent switching characteristics. Its high surge current capability and optimized design for high-temperature operation contribute to system efficiency improvements and reduced cooling requirements.

Key electrical parameters include a breakdown voltage of 650V, a typical charge (Qc) of 13 nC at 400V, and a typical energy (Ec) of 2.9 µJ at 400V. The forward current (If) is rated at 8A at a case temperature below 150°C.

This diode is well-suited for applications such as switch mode power supplies, power factor correction, solar inverters, and uninterruptible power supplies. It is available in a PG-VSON-4 package, designed for efficient thermal management and compact solutions. The Pb-free lead plating ensures RoHS compliance.

The thinQ!™ Generation 5 technology, combined with a new compact design and thin-wafer technology, results in improved efficiency across all load conditions. This makes the D0865C5 an excellent choice for applications demanding higher frequency, increased power density, and higher system reliability.