| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,454 pcs
|
4454 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Central Semiconductor CZT5551 is a silicon NPN transistor manufactured using the epitaxial planar process and epoxy molded in a surface mount package. It is specifically designed for high voltage amplifier applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of 600mA. The power dissipation (PD) is rated at 2.0W. The transistor operates within a junction temperature range of -65 to +150°C.
Electrical specifications detail various parameters such as collector cutoff current (ICBO) and emitter cutoff current (IEBO). It also specifies collector-emitter saturation voltage (VCE(SAT)) and base-emitter saturation voltage (VBE(SAT)) under different current conditions. The DC current gain (hFE) ranges from 80 to 250 at IC=10mA, and the transition frequency (fT) is between 100 and 300MHz at 100MHz.
The CZT5551 is housed in a SOT-223 surface mount package. Lead code designation is: 1) Base, 2) Collector, 3) Emitter, 4) Collector. Dimensions for the SOT-223 case are provided in both millimeters and inches.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the CZT5551 is 160V.
The continuous collector current (IC) for the CZT5551 is 600mA.
The power dissipation (PD) for the CZT5551 is 2.0W.
The operating and storage junction temperature range for the CZT5551 is -65 to +150°C.
The CZT5551 is available in a SOT-223 surface mount package.
The DC current gain (hFE) of the CZT5551 ranges from 80 to 250 at IC=10mA.
The transition frequency (fT) of the CZT5551 is between 100 and 300MHz at VCE=10V, IC=10mA, f=100MHz.