| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,559 pcs
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3559 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The CZT5551 from Central Semiconductor is a silicon NPN transistor manufactured using the epitaxial planar process and packaged in an epoxy molded surface mount SOT-223 case. This transistor is specifically designed for high voltage amplifier applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of 600mA. The power dissipation (PD) is rated at 2.0W. The operating and storage junction temperature range is -65°C to +150°C.
Electrical characteristics include a collector-base breakdown voltage (BVCBO) of 180V and an emitter-base breakdown voltage (BVEBO) of 6.0V. Saturation voltages are low, with VCE(SAT) at a maximum of 0.20V at 50mA collector current and 5.0mA base current. DC current gain (hFE) ranges from 80 to 250 at 5.0V and 10mA.
This transistor operates at a transition frequency (fT) of 100-300MHz at 10V, 10mA, and 100MHz. Input capacitance (Cib) is 20pF and output capacitance (Cob) is 6pF, both measured at 1.0MHz. The CZT5551 is suitable for various amplifier designs requiring high voltage capability in a compact surface mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the CZT5551 is 160V.
The continuous collector current (IC) for the CZT5551 is 600mA.
The power dissipation (PD) of the CZT5551 is 2.0W at 25°C.
The operating and storage junction temperature range for the CZT5551 is -65°C to +150°C.
The CZT5551 is available in a SOT-223 surface mount package.