CZT5551 The Central Semiconductor CZT5551 is a surface mount NPN transistor designed for high voltage amplifier applications. It features a 160V collector-emitter voltage and 600mA continuous collector current.
Mfr Part #:

CZT5551

Available from 1 distributors
Mfr Name: Central Technologies
Central Technologies
The Central Semiconductor CZT5551 is a surface mount NPN transistor designed for high voltage amplifier applications. It features a 160V collector-emitter voltage and 600mA continuous collector current.
Total Stock: 3,559 pcs
$ Price Range: $0.85

CZT5551 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,559 pcs
3559 pcs On Request 1 On Request On Request 16+ On Request On Request

CZT5551 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Lead Spacing
Lead Style
Mounting Type
Noise Figure
Power Dissipation
SVHC Present
Storage Temperature
Thermal Resistance

CZT5551 Description

Short technical summary and product information.

The CZT5551 from Central Semiconductor is a silicon NPN transistor manufactured using the epitaxial planar process and packaged in an epoxy molded surface mount SOT-223 case. This transistor is specifically designed for high voltage amplifier applications.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of 600mA. The power dissipation (PD) is rated at 2.0W. The operating and storage junction temperature range is -65°C to +150°C.

 

Electrical characteristics include a collector-base breakdown voltage (BVCBO) of 180V and an emitter-base breakdown voltage (BVEBO) of 6.0V. Saturation voltages are low, with VCE(SAT) at a maximum of 0.20V at 50mA collector current and 5.0mA base current. DC current gain (hFE) ranges from 80 to 250 at 5.0V and 10mA.

 

This transistor operates at a transition frequency (fT) of 100-300MHz at 10V, 10mA, and 100MHz. Input capacitance (Cib) is 20pF and output capacitance (Cob) is 6pF, both measured at 1.0MHz. The CZT5551 is suitable for various amplifier designs requiring high voltage capability in a compact surface mount package.

CZT5551 Quick Information

Product Type: NPN Transistor
Canonical Name: CZT5551 NPN Transistor
Subcategory: Bipolar (BJT) - Single

CZT5551 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CZT5551 Estimated Pricing

Qty Low High
1+ $0.85 $0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

CZT5551 Features

  • Surface mount NPN transistor
  • 160V collector-emitter voltage
  • 600mA continuous collector current
  • 2W power dissipation
  • Designed for high voltage amplifiers

CZT5551 Applications

  • Suitable for high voltage amplifiers
  • Used in signal amplification circuits
  • Ideal for compact designs
  • General purpose amplification tasks

CZT5551 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the CZT5551?

The maximum collector-emitter voltage (VCEO) for the CZT5551 is 160V.

What is the continuous collector current rating of the CZT5551?

The continuous collector current (IC) for the CZT5551 is 600mA.

What is the power dissipation of the CZT5551?

The power dissipation (PD) of the CZT5551 is 2.0W at 25°C.

What is the operating temperature range for the CZT5551?

The operating and storage junction temperature range for the CZT5551 is -65°C to +150°C.

What package type is the CZT5551 available in?

The CZT5551 is available in a SOT-223 surface mount package.

Home
Account

Categories