| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,343 pcs
|
2343 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The Cypress Semiconductor CYDMX256A16-90BVXI is a volatile SRAM memory integrated circuit with a capacity of 256Kb, organized as 16K x 16 bits. It utilizes a parallel memory interface and operates with an access time and write cycle time of 90ns.
This MoBL (Memory, Battery-Optimized Logic) SRAM is designed for applications requiring fast data access and low power consumption. It operates within a wide voltage supply range of 1.8V to 3.3V and is specified for an operating temperature range of -40°C to 85°C.
The component is housed in a 100-VFBGA package, suitable for surface mount applications. The 100-VFBGA (6x6) supplier device package ensures a compact footprint for integration into various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 1.8V to 3.3V.
The device is packaged in a 100-VFBGA (6x6 mm) surface mount package.
The operating temperature range is -40°C to 85°C.
The memory is organized as 16K x 16 bits.
The access time is 90ns.
The write cycle time is 90ns.
This is a dual port, MoBL SRAM (volatile).