CY7C2568KV18-400BZXC

The Infineon Technologies CY7C2568KV18-400BZXC is a high-performance 72-Mbit Synchronous Pipelined SRAM featuring DDR II+ architecture. This device offers a 400 MHz clock frequency, enabling high bandwidth operations with data transferred at 1100 MHz.

Key electrical specifications include a core voltage of 1.8V ± 0.1V and an I/O voltage (VDDQ) ranging from 1.4V to VDD, supporting both 1.5V and 1.8V I/O supplies. It operates with a 2.5 clock cycle read latency and features a 2-word burst architecture to reduce address bus frequency. The SRAM utilizes HSTL inputs and variable drive HSTL output buffers.

Designed for ease of integration in high-speed systems, the CY7C2568KV18-400BZXC includes features like Echo Clocks (CQ and CQ) for simplified data capture and an On-Die Termination (ODT) feature for D[x:0], BWS[x:0], and K/K inputs, which helps reduce external component count and board complexity.

This component is available in a 165-Ball FBGA package measuring 13 x 15 x 1.4 mm and is suitable for surface mounting. It operates within a temperature range of 0°C to 70°C (TA). The memory organization is 4M x 18, providing a substantial storage capacity for demanding applications.