| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,566 pcs
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3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies CY7C1512KV18-300BZXC is a high-performance 72-Mbit synchronous SRAM featuring QDR II architecture. This device offers separate independent read and write data ports, supporting concurrent transactions for enhanced efficiency.
With a clock frequency of 300 MHz, it provides high bandwidth and utilizes Double Data Rate (DDR) interfaces on both ports, enabling data transfer at up to 700 MHz. The SRAM operates within a voltage range of 1.7V to 1.9V and is housed in a 165-FBGA package, suitable for surface mounting.
Key features include a 2-word burst architecture on all accesses, a single multiplexed address input bus, and variable drive HSTL output buffers. The CY7C1512KV18-300BZXC is designed for applications requiring fast and efficient memory access.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
300 MHz.
72 Mbit.
Parallel.
1.7V to 1.9V.
0°C to 70°C (TA).
165-LBGA (also 165-FBGA, 13x15 mm).
QDR II synchronous SRAM.