| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,358 pcs
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6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CY7C1471V25-133AXC from Infineon Technologies is a 72-Mbit (2M x 36) synchronous flow-through burst SRAM. It utilizes the No Bus Latency (NoBL) architecture, enabling true back-to-back read or write operations without wait states and data transfers on every clock cycle. This significantly improves system throughput, especially in applications requiring frequent write-read transitions.
This SRAM supports bus operations up to 133 MHz with zero wait states, offering a fast clock-to-output time of 6.5 ns. It operates with a 2.5V I/O supply and features registered inputs for flow-through operation, byte write capability, and synchronous self-timed writes. The device includes three chip enables for simple depth expansion and an asynchronous output enable.
Packaged in a 100-TQFP (14x20) surface-mount package, the CY7C1471V25-133AXC is designed for applications demanding high-speed data access and efficient operation. It operates within a temperature range of 0°C to 70°C (TA) and features automatic power-down capabilities.
Key specifications include a memory size of 72Mbit, a parallel interface, and a memory organization of 2M x 36. The technology is SRAM - Synchronous, SDR, with a maximum operating current of 305 mA and a maximum CMOS standby current of 120 mA.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
72 Mbit.
133 MHz.
6.5 ns.
2M x 36.
The device operates with a 2.5V I/O supply (VDDQ) and a core voltage range of 2.375V to 2.625V.
0°C to 70°C.
100-TQFP (14x20) surface mount.