CY7C1413KV18-333BZI The CY7C1413KV18-333BZI is a volatile SRAM memory module from Infineon, utilizing QDR II technology.
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CY7C1413KV18-333BZI

Available from 1 distributors
Mfr Name: Infineon
Infineon
The CY7C1413KV18-333BZI is a volatile SRAM memory module from Infineon, utilizing QDR II technology.
✓ Total Stock: 1,156 pcs
$ Price Range: $1.50

CY7C1413KV18-333BZI Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,156 pcs
1156 pcs On Request 1 On Request On Request On Request On Request On Request

CY7C1413KV18-333BZI Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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CY7C1413KV18-333BZI Description

Short technical summary and product information.

The CY7C1413KV18-333BZI is a memory component manufactured by Infineon. It features volatile memory type and uses SRAM technology, specifically the Synchronous, QDR II type. This memory is suitable for applications requiring high-speed data transfer and synchronous operation. It is designed for integration into electronic systems where fast, reliable memory access is critical.

 

The component is part of Infineon's memory product line, offering high performance for demanding computing and communication applications. It is typically mounted on printed circuit boards using standard surface-mount technology, compatible with industry-standard packages. Its design considerations include low latency and high bandwidth, making it suitable for use in high-speed data processing environments.

CY7C1413KV18-333BZI Quick Information

Product Type: Memory
Canonical Name: CY7C1413KV18-333BZI

CY7C1413KV18-333BZI Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CY7C1413KV18-333BZI Estimated Pricing

Qty Low High
1+ $1.50 $1.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

CY7C1413KV18-333BZI Features

  • Volatile memory type for fast data access.
  • SRAM format suitable for high-speed applications.
  • Synchronous QDR II technology for reliable performance.
  • 36 Mbit memory size for complex data storage.
  • 165-FBGA package for compact device integration.

CY7C1413KV18-333BZI Applications

  • Suitable for high-speed memory applications.
  • Used in data buffering and storage systems.
  • Ideal for synchronous memory in computing devices.
  • Applicable in telecommunications equipment.
  • Suitable for embedded systems requiring volatile memory.

CY7C1413KV18-333BZI FAQs

2 frequently asked questions generated from this part’s specifications.
What is the memory type of the CY7C1413KV18-333BZI?

The memory type is volatile.

What technology does the CY7C1413KV18-333BZI use?

It uses SRAM - Synchronous, QDR II technology.

CY7C1413KV18-333BZI Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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Cypress Semiconductor
The CY7C1414KV18-300BZC is a 36Mbit Synchronous SRAM from Cypress Semiconductor. It features a 300MHz clock frequency and operates within a 1.7V to 1.9V supply range.
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CY7C1411KV18-250BZC
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Cypress Semiconductor
The Cypress Semiconductor CY7C1411KV18-250BZC is a 36Mbit synchronous SRAM with a clock frequency of 250 MHz. It operates at voltages between 1.7V and 1.9V and is available in a surface mount package.
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