| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,066 pcs
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3066 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Infineon CY7C1320KV18-250BZCT is a high-performance Synchronous, DDR II SRAM memory integrated circuit. It offers a substantial 18Mbit memory capacity, making it suitable for applications requiring significant data storage. The IC operates at a fast clock speed of 250 MHz, ensuring rapid data access and processing.
This memory component is housed in a compact 165-FBGA (13x15) package, facilitating integration into space-constrained designs. Its SRAM technology provides fast read and write capabilities essential for buffering and temporary data storage in various electronic systems.
The CY7C1320KV18-250BZCT is designed for applications demanding speed and capacity in memory subsystems. Its specifications make it a viable option for embedded systems, networking equipment, and high-speed data processing tasks where efficient memory performance is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $165.89 | $165.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Infineon CY7C1320KV18-250BZCT is a Synchronous, DDR II SRAM memory IC.
The CY7C1320KV18-250BZCT has a memory capacity of 18Mbit.
This SRAM IC operates at a clock speed of 250 MHz.
The CY7C1320KV18-250BZCT is in a 165-FBGA (13x15) package.