| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,474 pcs
|
4474 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Access Time | |
| Memory Size | |
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| Tape & Reel | |
| Voltage Supply |
This Infineon CY7C1318KV18-250BZXI is a high-speed synchronous SRAM memory component. It offers a substantial 18M-Bit storage capacity, organized as 1M x 18 bits, making it suitable for various data storage applications.
The device operates at a supply voltage of 1.8V and boasts an impressive access time of 0.45ns, ensuring rapid data retrieval. It is designed for surface mounting and comes in a 165-FBGA package.
This SRAM chip is ideal for applications requiring fast and reliable memory solutions where space and performance are critical. Its specifications make it a strong candidate for embedded systems, networking equipment, and high-performance computing.
Key electrical characteristics include its SRAM type, 1.8V operating voltage, 18M-bit density, 1M x 18 organization, and 0.45ns access time. The component is supplied in a Tray standard package.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CY7C1318KV18-250BZXI is a synchronous SRAM memory chip.
The memory size is 18M-Bit.
The operating voltage is 1.8V.
The access time is 0.45ns.
The package type is 165-FBGA.