| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CY7C1263KV18-400BZI from Infineon Technologies is a high-performance 36-Mbit synchronous SRAM utilizing the QDR II+ architecture. This device operates at a clock frequency of 400 MHz, providing high bandwidth for demanding applications. It features separate independent read and write data ports, supporting concurrent transactions for increased efficiency.
The SRAM operates with a core voltage of 1.8V and offers a 2.5 cycle read latency. The memory is organized as 2M x 18 bits and uses a parallel interface. It is housed in a compact 165-FBGA package, suitable for surface mounting.
This component is designed for applications requiring fast data access and high throughput. Its QDR II+ architecture and double data rate interfaces on both read and write ports contribute to its performance capabilities. The device is specified for operation over a temperature range of -40°C to 85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 36Mbit.
The clock frequency is 400 MHz.
The core voltage is 1.8V, and the I/O voltage ranges from 1.4V to 1.8V.
The operating temperature range is -40°C to 85°C (TA).
It is supplied in a 165-FBGA (13x15) package.
The read latency is 2.5 cycles.