| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,080 pcs
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2080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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This Cypress Semiconductor CY7C1069GN30-10ZSXI is a high-speed, 16Mb SRAM designed for volatile memory applications. It offers a fast 10ns access time, making it suitable for performance-critical systems.
The device operates with a supply voltage ranging from 2.2V to 3.6V, providing flexibility in power design. The memory is organized as 2M x 8 bits and utilizes a parallel interface for data access.
Packaged in a 54-TSOP II format, this component is designed for surface mounting. The operating temperature range is -40°C to 85°C, ensuring reliability in various environmental conditions. This SRAM is a reliable choice for embedded systems, data buffering, and other applications requiring fast, non-volatile data storage.
Key specifications include 16Mb memory size, 10ns speed, and a 2.2V to 3.6V operating voltage. The 54-TSOP II package facilitates integration into standard PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
16Mb (2M x 8).
10ns.
2.2V to 3.6V.
-40°C to 85°C.
54-TSOP II (0.400", 10.16mm Width).
Volatile.
Parallel.