CY7C1061GE30-10BV1XI The Infineon CY7C1061GE30-10BV1XI is a 16Mbit asynchronous SRAM chip. It features a 10ns access time and operates within a 2.2V to 3.6V supply voltage range.
Mfr Part #:

CY7C1061GE30-10BV1XI

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon CY7C1061GE30-10BV1XI is a 16Mbit asynchronous SRAM chip. It features a 10ns access time and operates within a 2.2V to 3.6V supply voltage range.
✓ Total Stock: 480 pcs
$ Price Range: $1.50

CY7C1061GE30-10BV1XI Available from 1 distributor

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CY7C1061GE30-10BV1XI Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Organization
Mounting Type
Operating Mode
Storage Temperature
Tape & Reel
Technology

CY7C1061GE30-10BV1XI Description

Short technical summary and product information.

The Infineon CY7C1061GE30-10BV1XI is a high-performance asynchronous Static Random Access Memory (SRAM) chip. It offers a memory density of 16Mbit, organized as 1M words by 16 bits, providing ample storage for various applications.

 

This SRAM chip boasts a fast access time of 10ns, ensuring quick data retrieval. It operates with a supply voltage ranging from 2.2V to 3.6V, with a nominal voltage of 3.0V, making it suitable for a wide array of electronic designs. The operating temperature range is from -40°C to 85°C, suitable for industrial environments.

 

Packaged in a 48-pin VFBGA (Very Thin Profile, Fine Pitch Ball Grid Array) with a 0.75mm terminal pitch, the CY7C1061GE30-10BV1XI is designed for surface mounting. The package dimensions are 6mm x 8mm with a maximum seated height of 1mm. The terminal finish is Tin/Silver/Copper (Sn/Ag/Cu), and the package body material is Plastic/Epoxy.

 

Key specifications include CMOS technology, asynchronous operating mode, and parallel data interface. The component is rated for a peak reflow temperature of 260°C with a maximum time of 30 seconds at peak temperature, aligning with standard industrial soldering processes.

CY7C1061GE30-10BV1XI Quick Information

Product Type: SRAM Chip
Canonical Name: Infineon Technologies AG CY7C1061GE30-10BV1XI Standard SRAM
Subcategory: SRAM

CY7C1061GE30-10BV1XI Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CY7C1061GE30-10BV1XI Estimated Pricing

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1+ $1.50 $1.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

CY7C1061GE30-10BV1XI Features

  • 16Mbit asynchronous SRAM chip.
  • Fast 10ns maximum access time.
  • Wide 2.2V to 3.6V supply voltage.
  • Industrial temperature range (-40°C to 85°C).
  • Compact 6mm x 8mm VFBGA package.

CY7C1061GE30-10BV1XI Applications

  • Suitable for embedded systems.
  • Ideal for data buffering needs.
  • Used in industrial control systems.
  • Applicable in consumer electronics.

CY7C1061GE30-10BV1XI FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory density of the CY7C1061GE30-10BV1XI?

The memory density is 16Mbit.

What is the access time for this SRAM chip?

The maximum access time is 10ns.

What is the operating supply voltage range?

The supply voltage ranges from 2.2V to 3.6V, with a nominal voltage of 3.0V.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C.

What type of package does the CY7C1061GE30-10BV1XI use?

It uses a 48-pin VFBGA package.

Is this SRAM chip surface mountable?

Yes, it is designed for surface mounting.

What is the RoHS status of this component?

The RoHS status is RoHS3 Compliant.

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