| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,103 pcs
|
16103 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
This Cypress Semiconductor CY7C1041DV33-10BVI is a high-speed asynchronous SRAM with a memory size of 4Mbit. It offers a fast access time of 10ns and a write cycle time of 10ns, making it suitable for demanding applications.
The memory is organized as 256K x 16 and utilizes a parallel interface. It operates within a voltage range of 3V to 3.6V and is designed for surface mounting, packaged in a 48-VFBGA (6x8) configuration.
The operating temperature range for this component is -40°C to 85°C (TA), ensuring reliable performance in various environmental conditions. Its SRAM technology provides volatile memory storage.
This part is classified under Memory ICs, specifically as an Asynchronous SRAM.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4Mbit.
256K x 16.
10ns.
3V to 3.6V.
-40°C to 85°C.
48-VFBGA (6x8mm).