| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,520 pcs
|
4520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Industrial Grade | |
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The Cypress Semiconductor CY7C1041D-10ZSXI is a high-performance CMOS static RAM organized as 256K words by 16 bits. This asynchronous SRAM offers a fast access time of 10 ns, making it suitable for various memory applications.
Key electrical characteristics include a supply voltage range of 4.5V to 5.5V. The device consumes low active power, with ICC at 90 mA at 10 ns (Industrial), and low CMOS standby power with ISB2 at 10 mA. It also features 2.0 V data retention.
Designed for easy memory expansion, the CY7C1041D-10ZSXI utilizes Chip Enable (CE) and Output Enable (OE) features. The inputs and outputs are TTL-compatible. The device is available in a 44-pin TSOP II package, suitable for surface mounting.
Environmental compliance includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 3 (168 Hours). The operating temperature range is -40°C to 85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10 ns.
4Mb (256K x 16).
4.5V to 5.5V.
-40°C to 85°C.
44-TSOP II, surface mount.
90 mA at 10 ns (industrial).
10 mA typical.