| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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35 pcs
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35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Cypress Semiconductor CY7C1041BV33-15VI is an integrated circuit SRAM memory component with a capacity of 4Mbit. It utilizes a parallel interface and offers an access time of 15 ns, with a write cycle time also at 15ns. The device operates within a supply voltage range of 3V to 3.6V.
The SRAM is designed for volatile memory applications and is organized as 256K x 16. It is housed in a 44-SOJ package, with the specific case form factor being 44-BSOJ (0.400", 10.16mm Width). The component is suitable for surface mounting and operates across a temperature range of -40°C to 85°C (TA).
Key specifications include its asynchronous SRAM technology and its 4Mbit memory size. The CY7C1041BV33-15VI is classified under memory ICs and is suitable for various electronic designs requiring reliable volatile memory storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15 ns.
3V to 3.6V.
-40°C to 85°C.
44-BSOJ (0.400", 10.16mm Width) with supplier package 44-SOJ.
4 Mbit, organized as 256K x 16.
Asynchronous SRAM.
15 ns (word and page modes).