| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Infineon CY7C1021DV33-10ZSXIT is a high-performance asynchronous Static Random Access Memory (SRAM) designed for various applications requiring fast data access. This component features a 1M x 8 organization, providing a total of 1 megabit of memory capacity.
Key electrical characteristics include a maximum access time of 10 nanoseconds and an operating voltage of 3.3V. These specifications make it suitable for applications demanding quick read and write operations.
The CY7C1021DV33-10ZSXIT is supplied in a 44-TSOP II package, designed for surface mounting. This package type is common in electronic designs where space efficiency is important.
This SRAM is part of Infineon's memory solutions, offering reliable performance for embedded systems and other digital applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.03 | $10.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 3.3V.
The maximum access time is 10 ns.
It is an asynchronous SRAM.
The organization is 1M x 8.
It is supplied in a 44-TSOP II package.