| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,551 pcs
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3551 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon CY7C1011DV33-10BVXI is a high-performance asynchronous Static RAM (SRAM) designed for various memory applications. This component offers a memory capacity of 2 Megabits, organized as 128K words by 16 bits, providing efficient data storage.
Key electrical specifications include a supply voltage of 3.3V and a fast access time of 10ns, making it suitable for applications requiring quick data retrieval. The write cycle time is also 10ns. The device operates as an asynchronous SRAM, simplifying integration into existing designs.
Packaged in a 48-VFBGA (6x8) format, the CY7C1011DV33-10BVXI is designed for surface mounting. This packaging is suitable for automated assembly processes. The part is listed as RoHS3 compliant and has an MSL of 1, indicating it is suitable for a wide range of manufacturing environments.
This SRAM is a reliable choice for embedded systems, data logging, and other applications where fast and non-volatile data storage is critical. Its specifications make it a versatile component for both prototyping and production.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CY7C1011DV33-10BVXI has a memory capacity of 2 Mb, organized as 128K words by 16 bits.
The operating voltage for this SRAM is 3.3V.
The access time for this component is 10ns.
The CY7C1011DV33-10BVXI is an asynchronous Static RAM (SRAM).
This part is supplied in a 48-VFBGA (6x8) package, designed for surface mounting.