| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Lead Style | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The Infineon Technologies CY62148ELL-45ZSXI is a high-performance, 4-Mbit static RAM organized as 512K words by 8 bits. It features advanced CMOS technology for optimum speed and power, offering an ultra-low standby current of typically 2.5 µA and an active current of 3.5 mA at 1 MHz. This device provides a very high speed of 45 ns and operates within a voltage range of 4.5 V to 5.5 V.
Designed for easy memory expansion with CE and OE features, the CY62148ELL-45ZSXI includes an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. It is available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC) packages, suitable for surface mounting.
This SRAM is ideal for portable applications requiring More Battery Life (MoBL) due to its ultra-low standby power consumption. The device is pin compatible with the CY62148B and suitable for interfacing with processors that have TTL I/P levels.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4Mbit, organized as 512K x 8.
45 ns.
4.5V to 5.5V.
32-TSOP II and 32-SOIC (0.400", 10.16mm Width), surface mount.
-40°C to 85°C (industrial).
2.5 µA typical, 7 µA maximum.
3.5 mA at 1 MHz typical.