| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
244 pcs
|
244 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present | |
| Speed | |
| Voltage Range |
The Infineon Technologies CY62146EV30LL-45ZSXIT is a high-performance, 4-Mbit Static RAM organized as 256K words by 16 bits. This device is designed for ultra-low active current, making it suitable for portable applications requiring extended battery life.
Key electrical specifications include a very high speed of 45 ns access time and a wide operating voltage range of 2.20 V to 3.60 V. It offers ultra-low standby power, with a typical standby current of 2.5 µA and a maximum of 7 µA. The typical active current is 3.5 mA at 1 MHz.
This SRAM features an automatic power-down function when deselected, significantly reducing power consumption. It is available in Pb-free 48-ball VFBGA and 44-pin TSOP II packages, supporting surface mount technology.
The CY62146EV30LL-45ZSXIT is part of Infineon's MoBL (More Battery Life) product line, ideal for applications where power efficiency is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.04 | $6.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The access time for the CY62146EV30LL-45ZSXIT is 45 ns.
The operating voltage range for the CY62146EV30LL-45ZSXIT is 2.20 V to 3.60 V.
The typical standby current is 2.5 µA, and the maximum standby current is 7 µA.
The typical active current at 1 MHz is 3.5 mA.
The memory organization is 256K words by 16 bits.
It is available in a Pb-free 48-ball VFBGA and a 44-pin TSOP II package.