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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CY15B104Q-SXIT from Infineon Technologies is a 4-Mbit non-volatile memory utilizing advanced ferroelectric process technology. This F-RAM offers read and write operations similar to a RAM, providing reliable data retention for 151 years.
Designed for high-speed serial communication, it features a very fast SPI interface supporting up to 40-MHz frequency. The memory is logically organized as 512 K x 8 bits and operates within a voltage range of 2.0 V to 3.6 V. It boasts high endurance with 100 trillion read/write cycles and offers 'NoDelay' writes, meaning data is written immediately without requiring polling.
Key electrical characteristics include low power consumption with 300 µA active current at 1 MHz, 100 µA typical standby current, and 3 µA typical sleep mode current. The device operates across an industrial temperature range of -40°C to +85°C.
This F-RAM is suitable for applications requiring frequent or rapid writes, such as data collection and industrial controls. It is provided in an 8-pin SOIC package suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $32.32 | $32.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CY15B104Q-SXIT has a memory size of 4 Mbit.
The CY15B104Q-SXIT uses a Serial Peripheral Interface (SPI).
The operating voltage range for the CY15B104Q-SXIT is 2 V to 3.6 V.
The operating temperature range is -40°C to 85°C.
The CY15B104Q-SXIT is available in an 8-SOIC package.
The CY15B104Q-SXIT offers a data retention period of 151 years.
The CY15B104Q-SXIT has an endurance of 100 trillion read/writes.