| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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45,379 pcs
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45379 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon CY14B101NA-ZS45XIT is a high-speed non-volatile SRAM (NVSRAM) memory integrated circuit with a capacity of 1Mbit. This device combines the performance of SRAM with non-volatile data retention, automatically saving data upon power loss without the need for external batteries or capacitors.
Key specifications include a 1Mbit memory size organized as 64K x 16, a parallel interface, and fast access and write cycle times of 25ns. It operates over a wide supply voltage range of 2.7V to 3.6V and is designed for industrial temperature ranges, operating from -40°C to 85°C.
The CY14B101NA-ZS45XIT is housed in a 44-pin TSOP II surface-mount package. Its reliable operation and data retention capabilities make it suitable for various applications requiring persistent data storage in dynamic memory environments.
This NVSRAM is designed for applications such as industrial control systems, process automation, data loggers, and electronic instrumentation where maintaining data integrity through power cycles is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $12.91 | $12.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CY14B101NA-ZS45XIT has a memory size of 1Mbit.
The access time for the CY14B101NA-ZS45XIT is 25 ns.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
The CY14B101NA-ZS45XIT is in a 44-TSOP II package.