| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,060 pcs
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1060 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CXTA42 from Central Semiconductor is a complementary NPN silicon planar epitaxial transistor designed for high voltage applications. It is housed in a surface mount SOT-89 package.
Key electrical specifications include a collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 500mA. The device offers a power dissipation (PD) of 1.2W and a thermal resistance (θJA) of 104°C/W. The operating and storage junction temperature range is -65°C to +150°C.
Electrical characteristics include a collector-emitter saturation voltage (VCE(SAT)) of 0.5V maximum at 20mA collector current and 2.0mA base current. The DC current gain (hFE) is a minimum of 25 at 1.0mA and a minimum of 40 at 10mA. The transition frequency (fT) is 50MHz minimum at 20V collector-emitter voltage and 10mA collector current. Output capacitance (Cob) is a maximum of 6pF.
This transistor is suitable for various high voltage applications requiring a surface mount component. Its complementary PNP type is the CXTA92.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
300V.
500mA.
SOT-89 surface-mount package.
-65°C to +150°C.
Minimum hFE of 40 at Vce=10V, Ic=10mA.
Minimum 50MHz at Vce=20V, Ic=10mA.
1.2W maximum.