Mfr Part #:

CXT5551

Mfr Name: CJ

The CJ CXT5551 is an NPN Silicon Epitaxial Planar Transistor designed for high voltage switching and amplification. It features a VCEO of 160V and comes in a SOT-89 package.

✓ Total Stock: 1,619 pcs

$ Price Range: $0.85

CXT5551 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,619 pcs On Request	1619 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

CXT5551 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	CJ
Halogen Free	Halogen-free
Noise Figure	8dB
Power Dissipation	0.625W
SVHC Present	Not Present
Tape & Reel	Tape & Reel

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CXT5551 Description

Short technical summary and product information.

The CXT5551 from CJ is an NPN Silicon Epitaxial Planar Transistor engineered for applications requiring high voltage switching and amplification. This device offers a Collector-Emitter Breakdown Voltage (VCEO) of 160V and a continuous Collector Current (IC) of up to 0.6A.

Key electrical characteristics include a minimum DC Current Gain (hFE) of 80 at 1mA and a maximum Collector-emitter Saturation Voltage (VCE(sat)) of 0.15V at 10mA. The transistor also exhibits a Current-Gain Bandwidth Product (fT) of at least 100MHz.

Packaged in a SOT-89 case, the CXT5551 is suitable for surface-mount designs. It is RoHS compliant and Halogen-free, meeting modern environmental standards. The epitaxial planar die construction ensures reliable performance in demanding applications.

CXT5551 Quick Information

Product Type: NPN Silicon Epitaxial Planar Transistor

Series: CXT5551

Canonical Name: CXT5551 NPN Silicon Epitaxial Planar Transistor

Subcategory: Single NPN

CXT5551 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

CXT5551 Estimated Pricing

Qty	Low	High
1+	$0.85	$0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

CXT5551 Features

High voltage NPN silicon epitaxial planar transistor.
Collector-Emitter Breakdown Voltage: 160V.
Continuous Collector Current: 0.6A.
Packaged in SOT-89 for surface mounting.
RoHS compliant and Halogen-free.

CXT5551 Applications

General purpose amplifier circuits.
High voltage switching applications.
Signal amplification in audio equipment.
Driver stages for medium power devices.

CXT5551 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the Collector-Emitter Breakdown Voltage (VCEO) of the CXT5551 transistor?

The Collector-Emitter Breakdown Voltage (VCEO) for the CXT5551 is a minimum of 160V.

What is the maximum continuous collector current for the CXT5551?

The maximum continuous collector current (IC) for the CXT5551 is 0.6A.

What package type is the CXT5551 transistor supplied in?

The CXT5551 transistor is supplied in a SOT-89 package.

What is the DC Current Gain (hFE) of the CXT5551 at 10mA collector current?

The minimum DC Current Gain (hFE) of the CXT5551 at VCE = 5V and IC = 10mA is 100.

What is the maximum Collector-emitter Saturation Voltage (VCE(sat)) for the CXT5551 at 10mA collector current?

The maximum Collector-emitter Saturation Voltage (VCE(sat)) for the CXT5551 at IC = 10mA and IB = 1mA is 0.15V.

What is the Current-Gain Bandwidth Product (fT) for the CXT5551?

The Current-Gain Bandwidth Product (fT) for the CXT5551 at IC = 10mA and VCE = 10V is a minimum of 100MHz and a maximum of 300MHz.