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CXDM4060N TR The Central Semiconductor Corp CXDM4060N TR is an N-Channel MOSFET with a 40V drain-to-source voltage and 6A continuous drain current. It is supplied in a SOT-89 package.
Mfr Part #:

CXDM4060N TR

Available from 1 distributors
Mfr Name: Central Semiconductor Corp
Central Semiconductor Corp
The Central Semiconductor Corp CXDM4060N TR is an N-Channel MOSFET with a 40V drain-to-source voltage and 6A continuous drain current. It is supplied in a SOT-89 package.
✓ Total Stock: 1,100 pcs
$ Price Range: $165.89

CXDM4060N TR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
1,100 pcs
On Request
1100 pcs On Request 1 On Request On Request On Request On Request On Request
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CXDM4060N TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
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CXDM4060N TR Description

Short technical summary and product information.

The CXDM4060N TR from Central Semiconductor Corp is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current (Id) of 6A at 25°C.

 

The MOSFET exhibits a maximum on-resistance (Rds On) of 31mOhm at 6A and 10V Vgs. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 3V maximum at 250µA, a maximum gate charge (Qg) of 12nC at 10V, and an input capacitance (Ciss) of 730pF maximum at 20V Vds. The maximum gate-to-source voltage (Vgs) is rated at 20V.

 

With a maximum power dissipation of 1.2W at 25°C ambient temperature, the CXDM4060N TR operates within a temperature range of -55°C to 150°C. It is available in a surface-mount SOT-89 package, also identified as TO-243AA.

 

This component is suitable for applications requiring efficient switching and power management. Its specifications make it a viable option for power supply circuits, motor control, and general-purpose switching applications where its voltage and current ratings are appropriate.

CXDM4060N TR Quick Information

Product Type: MOSFET
Canonical Name: CXDM4060N TR N-Channel MOSFET
Subcategory: MOSFET N-CH

CXDM4060N TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CXDM4060N TR Estimated Pricing

Qty Low High
1+ $165.89 $165.89

Estimated market price range - modelled values for guidance only, not live distributor offers.

CXDM4060N TR Features

  • N-Channel MOSFET technology.
  • 40V drain-to-source voltage rating.
  • 6A continuous drain current capability.
  • Low 31mOhm maximum on-resistance.
  • Surface mount SOT-89 package.

CXDM4060N TR Applications

  • Suitable for power switching applications.
  • Used in DC-DC converters.
  • Applicable for motor control circuits.
  • General purpose switching tasks.

CXDM4060N TR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the CXDM4060N TR?

The maximum drain-to-source voltage (Vdss) is 40V.

What is the continuous drain current at 25°C for this MOSFET?

The continuous drain current (Id) at 25°C is 6A.

What is the maximum on-resistance of the CXDM4060N TR at 6A and 10V Vgs?

The maximum on-resistance (Rds On) is 31mOhm at 6A drain current and 10V gate-source voltage.

What is the maximum gate charge at 10V Vgs?

The maximum gate charge (Qg) is 12nC at 10V Vgs.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 3V at 250µA.

What is the input capacitance at 20V Vds?

The maximum input capacitance (Ciss) is 730pF at 20V Vds.

What is the maximum operating temperature for this device?

The operating temperature range is -55°C to 150°C.

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