| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba CUHS15S40,H3F is a silicon epitaxial Schottky barrier diode designed for high-speed switching applications. It is rated with a maximum reverse voltage (VR) of 40V and an average rectified forward current (IO) of 1.5A. The forward voltage is typically 450mV at 1.5A (maximum 510mV), ensuring low conduction losses. Reverse leakage current is typically 80μA at 10V and does not exceed 200μA at 40V.
The diode offers a non-repetitive peak forward surge current capability of 10A (10ms pulse width). It features a typical junction capacitance of 170pF at 0V and 1MHz, supporting fast switching. The operating junction temperature range is up to 150°C.
Packaged in a compact 2-SMD flat lead US2H case, this diode is suitable for surface-mount assembly. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). The part is intended for use in power supply rectification, polarity protection, and freewheeling diode applications requiring low forward drop and fast recovery.
The maximum DC reverse voltage rating is 40V.
The average rectified forward current (Io) is 1.5A.
The typical forward voltage is 450mV at IF=1.5A; the maximum is 510mV.
It comes in a 2-SMD flat lead package with supplier device package US2H. Surface mount.
The maximum junction temperature is 150°C.
Reverse leakage current is typically 80μA at VR=10V and maximum 200μA at VR=40V.
It is listed as RoHS3 Compliant, but this has not been verified from the datasheet.