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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,115 pcs
|
1115 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Applications | |
| Automotive Grade | |
| Collector Current - Continuous | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current Rating (Amps) | |
| Drain Current (Maximum @ Continuous @ TA = 100 °C) | |
| Drain Current (Maximum @ Continuous @ TA = 25 °C) | |
| Drain Current (Maximum @ pulsed) | |
| Drain-Gate Voltage | |
| Drain-source voltage | |
| Emitter-Base Breakdown Voltage | |
| Gate Source Voltage (Maximum @ continuous) | |
| Gate Source Voltage (Maximum @ pulsed) | |
| Halogen Free | |
| Industrial Grade | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature Range | |
| Package Weight | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Terminal Finish | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Voltage | |
| Weight |
The CTA2P1N-7-F is a complex transistor array from Diodes Incorporated that integrates a PNP transistor (MMBT4403 type) and an N-Channel MOSFET (2N7002 type) in a single SOT-363 package. The PNP transistor features a collector-emitter breakdown voltage of -40V and a continuous collector current of -600mA. The N-Channel MOSFET offers a drain-source voltage of 60V and a continuous drain current of 115mA (73mA at 100°C), with a pulsed drain current of 800mA. Total power dissipation is 150mW, with a junction-to-ambient thermal resistance of 833°C/W. The device operates over a temperature range of -55 to +150°C. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). The surface-mount SOT-363 package is suitable for automated assembly. A complementary NPN/P-Channel version (CTA2N1P) is available. This part is intended for general-purpose switching and amplification applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.58 | $0.58 |
| 10+ | $0.35 | $0.35 |
| 100+ | $0.24 | $0.24 |
| 500+ | $0.17 | $0.17 |
| 1,000+ | $0.15 | $0.15 |
| 3,000+ | $0.14 | $0.14 |
| 6,000+ | $0.12 | $0.12 |
| 9,000+ | $0.11 | $0.11 |
| 24,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PNP transistor has a collector-emitter breakdown voltage of -40V, and the N-Channel MOSFET has a drain-source voltage of 60V.
It is available in a 6-TSSOP, SC-88, SOT-363 surface-mount package.
-55 to +150°C.
Yes, it is RoHS3 compliant.
PNP transistor: 600mA continuous; N-Channel MOSFET: 115mA continuous (73mA at 100°C), 800mA pulsed.
150mW maximum.
Yes, the CTA2N1P is the complementary NPN/P-Channel version.