| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Power Dissipation | |
| Reverse Recovery Time |
The HUAJING CSF501D is an N-Channel Power MOSFET designed for various electronic applications. It operates in depletion mode and boasts an improved ESD capability, making it more robust in handling electrostatic discharges.
Key electrical characteristics include a maximum drain-to-source voltage of 600V and a continuous drain current of 30mA at 25°C, decreasing to 24mA at 70°C. The device features a typical on-state resistance of 700 Ohms at a gate-source voltage of 0V and a drain current of 3mA. The gate threshold voltage is typically -1.8V.
Dynamic characteristics such as turn-on delay time, rise time, turn-off delay time, and fall time are specified, along with total gate charge, gate-to-source charge, and gate-to-drain charge. The MOSFET also includes a body diode with specified continuous and pulsed current ratings and forward voltage.
Thermal performance is supported by a junction-to-ambient thermal resistance of 250°C/W. The device is Pb-free and Halogen Free, aligning with environmental compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
30mA at Tc=25°C.
-55 to 150°C.
-1.8V.
700 ohms at VGS=0V, ID=3mA.
Typical 50pF at VGS=-5V, VDS=25V, f=1MHz.
Yes, it is halogen free.