| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,262 pcs
|
3262 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The CSD88537NDT is a dual N-channel MOSFET from Texas Instruments, designed for high-efficiency power switching applications. It features a drain-to-source voltage rating of 60V and a continuous drain current rating of 15A, making it suitable for a variety of medium-power circuits.
With a maximum on-resistance of 15 mOhm at 8A and 10V gate drive, the device offers low conduction losses. The gate charge is 18 nC at 10V, and input capacitance is 1400 pF at 30V, providing predictable switching behavior. The maximum gate threshold voltage is 3.6V at 250µA.
The device is housed in an 8-SOIC package (0.154" width, 3.90mm) and is surface-mount compatible. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2.1W. The dual-channel configuration allows for compact designs in applications such as synchronous rectification, load switching, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.69 | $2.69 |
| 10+ | $1.74 | $1.74 |
| 100+ | $1.04 | $1.04 |
| 250+ | $1.04 | $1.04 |
| 500+ | $0.90 | $0.90 |
| 1,000+ | $0.82 | $0.82 |
| 2,500+ | $0.82 | $0.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current (Id) is 15A.
The maximum on-resistance is 15 mOhm at Id=8A and Vgs=10V.
The operating temperature range is -55°C to 150°C (junction temperature).
The CSD88537NDT is available in an 8-SOIC surface-mount package (0.154" width, 3.90mm).
The maximum gate threshold voltage is 3.6V at Id=250µA.
The maximum power dissipation is 2.1W.