| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The CSD87588NT is a dual N-channel MOSFET array from Texas Instruments, configured as a half bridge. It is designed for high-efficiency power conversion and switching applications. The device is rated for a maximum drain-to-source voltage of 30V and a maximum drain current of 25A.
Key electrical characteristics include a maximum on-resistance of 9.6mΩ at a gate-source voltage of 10V and a drain current of 15A, a typical gate charge of 4.1nC at 4.5V, and an input capacitance of 736pF at 15V. The MOSFET features a logic-level gate for direct driving from low-voltage controllers, with a maximum gate threshold voltage of 1.9V.
The device is mounted in a 5-LGA package with a supplier device package designation of 5-PTAB (5x3.5). It operates over a junction temperature range of -55°C to 150°C. This compact surface-mount package is suitable for space-constrained applications such as DC-DC converters, load switches, and motor drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.62 | $1.62 |
| 10+ | $1.08 | $1.08 |
| 100+ | $0.90 | $0.90 |
| 250+ | $0.90 | $0.90 |
| 500+ | $0.85 | $0.85 |
| 1,000+ | $0.82 | $0.82 |
| 2,500+ | $0.81 | $0.81 |
| 5,000+ | $0.80 | $0.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
5-LGA package, with supplier device package 5-PTAB (5x3.5).
-55°C to 150°C (junction temperature).
RoHS3 compliant.
25A.
9.6mΩ maximum at Vgs=10V and Id=15A.
2 N-Channel (Half Bridge).