Mfr Part #:

CSD87502Q2T

Dual N-channel MOSFET rated at 30V drain-source voltage and 5A continuous drain current. Features logic-level gate drive, 32.4mΩ max on-resistance, and 6-WSON surface-mount package.

✓ Total Stock: 6,888 pcs

$ Price Range: $0.46 - $1.08

CSD87502Q2T Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	6,240 pcs On Request	6240 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Unit Electronics Co.,Limited ✓ Non-Authorised Inventory information	648 pcs On Request	648 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

CSD87502Q2T Description

Short technical summary and product information.

This device is a dual N-channel MOSFET from Texas Instruments in a compact 6-WDFN exposed pad package (supplier package 6-WSON 2x2). It integrates two MOSFETs in one surface-mount package, helping reduce board space and component count in power-switching and load-switching circuits.

The electrical ratings include a drain-to-source voltage of 30V, a continuous drain current of 5A, and a maximum on-resistance of 32.4mΩ at 4A and 10V gate drive. The logic-level gate feature enables 5V drive, making the device suitable for direct control by low-voltage microcontrollers. Maximum gate threshold voltage is 2V at 250µA, gate charge is 6nC at 10V, and input capacitance is 353pF at 15V drain-source.

The device dissipates up to 2.3W and operates over a junction temperature range of -55°C to 150°C. It is offered in a 6-WSON (2x2) surface-mount package with an exposed pad for improved thermal performance.

CSD87502Q2T Quick Information

Product Type: MOSFET Array

Canonical Name: Dual N-Channel MOSFET, 30V, 5A, 6-WSON

Subcategory: MOSFET Arrays

CSD87502Q2T Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

CSD87502Q2T Estimated Pricing

Qty	Low	High
1+	$1.08	$1.08
10+	$0.71	$0.71
100+	$0.58	$0.58
250+	$0.58	$0.58
500+	$0.55	$0.55
1,000+	$0.53	$0.53
2,500+	$0.52	$0.52
10,000+	$0.46	$0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD87502Q2T Features

Dual N-channel MOSFET in one package.
Rated for 30V drain-source voltage.
Supports 5A continuous drain current.
Logic-level gate for 5V drive.
32.4mΩ max on-resistance at 10V.

CSD87502Q2T Applications

Ideal for load switching in portable devices.
Used in DC-DC converter power stages.
Suitable for battery management circuits.
Good for power distribution switching.

CSD87502Q2T FAQs

7 frequently asked questions generated from this part’s specifications.

What is the rated drain-to-source voltage of the CSD87502Q2T?

30V.

What is the continuous drain current rating?

5A.

What is the maximum on-resistance and at what test conditions?

32.4mΩ at Id=4A and Vgs=10V.

What package options are available?

Surface-mount 6-WDFN exposed pad; supplier device package is 6-WSON (2x2).

What is the operating junction temperature range?

-55°C to 150°C.

Does the device support logic-level gate drive?

Yes, it is designed for 5V gate drive.

Is the CSD87502Q2T RoHS compliant?

Existing data lists RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.

Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer Name	Texas Instruments
Configuration	2 N-Channel (Dual)
Current	5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 5V Drive
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	353 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power	2.3 W
Rds On (Max) @ Id, Vgs	32.4 mOhm @ 4 A, 10 V
Supplier Device Package	6-WSON (2x2)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V @ 250 µA