| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100,588 pcs
|
100588 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
45,200 pcs
|
45200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The CSD87312Q3E is a 30V, dual N-channel NexFET power MOSFET from Texas Instruments in a common-source configuration. It is designed for adaptor/USB input protection in space-constrained multi-cell battery charging applications. The device features ultra-low drain-to-drain on-resistance of 38mOhm maximum at VGS=4.5V, enabling minimal conduction losses.
Key electrical specifications include a continuous drain current of 27A (silicon limited at TC=25°C), typical gate threshold voltage of 1V, and total gate charge of 6.3nC typical. The logic-level gate drive allows direct interface with 5V control signals. The device is avalanche rated and offers low thermal resistance.
The CSD87312Q3E is housed in a space-saving SON 3.3mm x 3.3mm plastic package (8-VSON) with surface mount mounting. It is Pb-free, RoHS compliant, and halogen free. The operating temperature range spans -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.18 | $2.18 |
| 10+ | $1.39 | $1.39 |
| 100+ | $0.94 | $0.94 |
| 500+ | $0.76 | $0.76 |
| 1,000+ | $0.69 | $0.69 |
| 2,500+ | $0.61 | $0.61 |
| 5,000+ | $0.56 | $0.56 |
| 10,000+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDS) is 30V.
The continuous drain current (ID) is 27A at TC=25°C (silicon limited).
The maximum on-resistance (Rds(on)) at VGS=4.5V is 38mOhm.
The device is available in an 8-PowerTDFN package, specifically the 8-VSON (3.3mm x 3.3mm) supplier device package.
The operating temperature range is -55°C to 150°C (junction temperature).
Yes, the device is listed as RoHS3 compliant and halogen free.