CSD86330Q3D CSD86330Q3D is a 25V, 20A N-channel half bridge power block MOSFET from Texas Instruments. It features low on-resistance (9.6mOhm) and logic level gate drive.
Mfr Part #:

CSD86330Q3D

Available from 7 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD86330Q3D is a 25V, 20A N-channel half bridge power block MOSFET from Texas Instruments. It features low on-resistance (9.6mOhm) and logic level gate drive.
✓ Total Stock: 56,940 pcs
$ Price Range: $1.02 - $3.05

CSD86330Q3D Available from 7 distributors

✓ Authorised
✓ Non-Authorised

CSD86330Q3D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Type
Vgs(th) (Max) @ Id

CSD86330Q3D Description

Short technical summary and product information.

The CSD86330Q3D is a NexFET power block designed for synchronous buck converters. It integrates two N-channel MOSFETs in a half bridge configuration with a maximum drain-source voltage of 25V and continuous drain current of 20A at 25°C. The device achieves a typical on-resistance of 9.6 mOhm at 14A and 8V gate drive, with a gate charge of 6.2 nC at 4.5V and input capacitance of 920 pF at 12.5V. It is optimized for 5V gate drive and supports high frequency operation up to 1.5 MHz. The package is an 8-PowerLDFN (8-LSON 3.3x3.3mm) with surface mount mounting. The part is RoHS compliant, halogen-free, and has Pb-free terminal plating. Applications include synchronous buck converters, high frequency power supplies, multiphase converters, and point-of-load regulators.

CSD86330Q3D Quick Information

Product Type: MOSFET Power Block (Half Bridge)
Series: NexFET
Canonical Name: CSD86330Q3D NexFET Power Block 25V N-Channel Half Bridge MOSFET
Subcategory: Half Bridge Power Block

CSD86330Q3D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD86330Q3D Estimated Pricing

Qty Low High
1+ $3.05 $3.05
10+ $1.98 $1.98
100+ $1.38 $1.38
500+ $1.13 $1.13
1,000+ $1.07 $1.07
2,500+ $1.02 $1.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD86330Q3D Features

  • Low Rds(on) of 9.6 mOhm at 14A.
  • Logic level gate drive for 5V operation.
  • High frequency operation up to 1.5 MHz.
  • Surface mount package in 8-LSON 3.3x3.3mm.
  • NexFET power block for synchronous buck.

CSD86330Q3D Applications

  • Synchronous buck converters for POL applications.
  • High frequency, high current power supplies.
  • Multiphase synchronous buck converters.
  • IMVP, VRM, and VRD applications.
  • Low duty cycle, high current converters.

CSD86330Q3D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

The maximum drain-source voltage is 25 V.

What is the continuous drain current rating?

The continuous drain current is 20 A at 25°C ambient temperature.

What is the typical on-resistance?

The maximum on-resistance is 9.6 mOhm at 14 A drain current and 8 V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is this component RoHS compliant?

Yes, the component is RoHS3 compliant (unverified, low confidence).

What package does it come in?

It comes in an 8-PowerLDFN package (8-LSON 3.3x3.3mm).

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.1 V at 250 µA drain current.

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