CSD85302L

The CSD85302L is a 20V dual N-channel NexFET power MOSFET from Texas Instruments. It features a common drain configuration with two N-channel MOSFETs in a single package, designed for low on-resistance and small footprint. The device has a maximum drain-source voltage of 20V and a maximum gate-source voltage of 10V. The typical gate threshold voltage is 0.9V, making it suitable for logic-level drive. The maximum on-resistance is 24mΩ at Vgs=4.5V and 36mΩ at Vgs=2.5V. The continuous drain current is rated at 7A at case temperature 25°C, both silicon and package limited. The typical gate charge is 6nC, with gate-drain charge of 1.4nC and gate-source charge of 1.2nC. The device includes ESD HBM protection greater than 2.5kV.

This MOSFET is housed in a 4-XFLGA package (4-Picostar) measuring 1.35mm x 1.35mm, suitable for surface mount assembly. The operating temperature range is -55°C to 150°C. The device is RoHS compliant, lead-free, and halogen free. The common drain configuration and small footprint make it ideal for battery-powered applications in small handheld devices where space is critical. The logic-level gate threshold allows direct drive from low-voltage logic.