CSD85301Q2 CSD85301Q2 is a 20V dual N-channel MOSFET from Texas Instruments. It supports 5A continuous drain current with low 27mΩ on-resistance.
Mfr Part #:

CSD85301Q2

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD85301Q2 is a 20V dual N-channel MOSFET from Texas Instruments. It supports 5A continuous drain current with low 27mΩ on-resistance.
✓ Total Stock: 1,795 pcs
$ Price Range: $0.25 - $0.99

CSD85301Q2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,790 pcs
1790 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5 pcs
5 pcs On Request 1 On Request On Request On Request On Request On Request

CSD85301Q2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

CSD85301Q2 Description

Short technical summary and product information.

The CSD85301Q2 is a 20 V dual N-channel power MOSFET from Texas Instruments. It integrates two independent N-channel MOSFETs in a single 6-WSON (2 mm × 2 mm) surface-mount package, designed for space-constrained power management applications.

 

It features a drain-to-source voltage rating of 20 V, maximum continuous drain current of 5 A at 25 °C, and a maximum drain-source on-resistance of 27 mΩ at VGS = 4.5 V (39 mΩ at VGS = 2.5 V). The device is logic-level and avalanche rated, with typical gate threshold voltage of 0.9 V and maximum of 1.2 V. Typical gate charge is 4.2 nC, with gate-drain charge of 1 nC and gate-source charge of 1.1 nC.

 

The MOSFET operates over a junction temperature range of -55 °C to 150 °C. It is RoHS compliant and halogen free. The dual-FET configuration is suitable for half-bridge topologies in synchronous buck converters, as well as adapter, USB input protection, and battery charging applications.

CSD85301Q2 Quick Information

Product Type: Dual N-Channel MOSFET
Series: NexFET
Canonical Name: 20V Dual N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Arrays

CSD85301Q2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb free

CSD85301Q2 Estimated Pricing

Qty Low High
1+ $0.99 $0.99
10+ $0.62 $0.62
100+ $0.40 $0.40
500+ $0.30 $0.30
1,000+ $0.25 $0.25
3,000+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD85301Q2 Features

  • Dual N-channel MOSFET in 2x2mm package.
  • 20 V drain-source voltage rating.
  • Low 27 mΩ on-resistance at 4.5 V.
  • Logic-level gate drive with 2.5 V capability.
  • Avalanche rated for rugged operation.

CSD85301Q2 Applications

  • Half-bridge stages in synchronous buck converters.
  • Adapter input protection circuits.
  • USB input protection applications.
  • Battery charging and power adapter circuits.

CSD85301Q2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the CSD85301Q2?

The maximum drain-to-source voltage is 20 V.

What package is the CSD85301Q2 available in?

The CSD85301Q2 is available in a 6-WDFN exposed pad package, also known as a 6-WSON (2 mm × 2 mm) surface-mount package.

What is the operating temperature range of the CSD85301Q2?

The operating temperature range is -55 °C to 150 °C (junction temperature).

Is the CSD85301Q2 RoHS compliant?

Yes, it is RoHS3 compliant according to the existing database and the manufacturer page states RoHS compliance.

What is the maximum continuous drain current of the CSD85301Q2?

The maximum continuous drain current is 5 A at TC=25 °C (both silicon and package limited).

What is the on-resistance of the CSD85301Q2?

The on-resistance is 27 mΩ maximum at VGS=4.5 V and 39 mΩ maximum at VGS=2.5 V.

What is the configuration of the CSD85301Q2?

It consists of two independent N-channel MOSFETs (dual N-channel).

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