| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,000 pcs
|
36000 pcs | On Request | 1 | On Request | On Request | 15+16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Type | |
| Vgs(th) (Max) @ Id |
The CSD83325L is a 12V, N-channel NexFET power MOSFET in a dual common drain configuration. It features a low on-resistance of 5.9 mΩ maximum at 4.5V gate voltage, and 12.1 mΩ at 2.5V. The gate threshold voltage is typically 0.95V, with a maximum of 1.25V at 250µA. Gate charge is 8.4 nC typical, with Qgd of 1.9 nC and Qgs of 2.2 nC. The device is rated for 8A drain current (silicon and package limited at 25°C) and can dissipate 2.3W. It is a logic-level device with gate ESD protection. The operating temperature range is -55°C to 150°C. The package is a 6-XFBGA (6-PicoStar) with a footprint of 2.16 mm × 1.11 mm (2.3976 mm²). It is lead-free, RoHS compliant, and halogen free. The common drain configuration and small footprint make it suitable for battery pack applications in small handheld devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
| 10+ | $0.30 | $0.30 |
| 100+ | $0.24 | $0.24 |
| 500+ | $0.23 | $0.23 |
| 1,000+ | $0.22 | $0.22 |
| 3,000+ | $0.21 | $0.21 |
| 6,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
5.9 mΩ maximum.
6-PicoStar (6-XFBGA) surface mount.
Yes, RoHS3 compliant (unverified).
-55°C to 150°C.
0.95V.
8A at 25°C case temperature (silicon and package limited).