| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
313,904 pcs
|
313904 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,884 pcs
|
2884 pcs | On Request | 1 | On Request | On Request | 1423+ | On Request | On Request | |
|
1,457 pcs
|
1457 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
199 pcs
|
199 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The CSD75208W1015 is a dual P-channel NexFET power MOSFET from Texas Instruments featuring a common source configuration. It is designed for low on-resistance and gate charge in a compact 1mm x 1.5mm wafer-level package, making it suitable for space-constrained battery-operated applications.
Key electrical specifications include a drain-to-source voltage rating of 20V, a maximum gate-to-source voltage of 6V, and a drain current of 1.6A at TC=25°C. The device offers a maximum on-resistance of 108mΩ at VGS=4.5V and 150mΩ at VGS=2.5V, with a typical gate threshold voltage of -0.8V. Gate charge is 1.9nC typical, and input capacitance is 410pF maximum at Vds=10V.
The device includes logic-level gate drive capability and gate ESD protection of 3kV (HBM). It operates over a junction temperature range of -55°C to 150°C and dissipates up to 750mW. The package is a 6-DSBGA (1x1.5) surface-mount package.
This MOSFET is RoHS compliant and halogen free, supporting environmentally conscious designs. Its small footprint and low profile make it ideal for portable electronics and other space-limited power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.82 | $0.82 |
| 10+ | $0.51 | $0.51 |
| 100+ | $0.33 | $0.33 |
| 500+ | $0.24 | $0.24 |
| 1,000+ | $0.21 | $0.21 |
| 3,000+ | $0.19 | $0.19 |
| 6,000+ | $0.18 | $0.18 |
| 9,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is rated at 20V.
The drain current is 1.6A at TC=25°C (silicon limited).
The maximum on-resistance is 108mΩ at VGS=4.5V.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant (RoHS3) and halogen free.
It is available in a 6-UFBGA, DSBGA package with supplier device package 6-DSBGA (1x1.5).
Yes, it has logic-level gate drive capability.