CSD25501F3 The CSD25501F3 is a -20V P-Channel MOSFET from Texas Instruments, rated for 3.6A drain current with a maximum on-resistance of 76mΩ at 4.5V gate drive. It comes in a compact 3-LGA surface mount package.
Mfr Part #:

CSD25501F3

Available from 4 distributors
Mfr Name: Texas Instruments
Texas Instruments
The CSD25501F3 is a -20V P-Channel MOSFET from Texas Instruments, rated for 3.6A drain current with a maximum on-resistance of 76mΩ at 4.5V gate drive. It comes in a compact 3-LGA surface mount package.
✓ Total Stock: 1,662,178 pcs
$ Price Range: $0.06 - $0.40

CSD25501F3 Available from 4 distributors

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CSD25501F3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Height (Max)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD25501F3 Description

Short technical summary and product information.

The CSD25501F3 is a -20V P-Channel MOSFET from Texas Instruments, part of the FemtoFET family. It is designed for space-constrained applications requiring low on-resistance and fast switching.

 

This MOSFET features a maximum drain current of 3.6A at TC=25°C, with a typical gate threshold voltage of -0.75V. The on-resistance is 76mΩ maximum at VGS=4.5V and 125mΩ at VGS=2.5V. It has ultra-low gate charge (1.02nC total) and low input capacitance (385pF at VDS=10V), enabling efficient high-frequency operation.

 

The device is housed in a 3-XFLGA package (PICOSTAR YJN) measuring 0.69mm x 0.6mm with a maximum height of 0.22mm. It supports surface mount mounting and includes integrated ESD protection. The operating temperature range is -55°C to 150°C.

 

Typical applications include load switching, power management in portable devices, and battery protection circuits. The logic-level gate drive (1.8V/4.5V) allows direct interface with low-voltage controllers.

CSD25501F3 Quick Information

Product Type: P-Channel MOSFET
Series: NexFET
Canonical Name: CSD25501F3 -20V P-Channel FemtoFET MOSFET
Subcategory: P-Channel MOSFET

CSD25501F3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

CSD25501F3 Estimated Pricing

Qty Low High
1+ $0.40 $0.40
10+ $0.25 $0.25
100+ $0.16 $0.16
500+ $0.12 $0.12
1,000+ $0.10 $0.10
3,000+ $0.09 $0.09
6,000+ $0.08 $0.08
9,000+ $0.07 $0.07
24,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD25501F3 Features

  • Maximum drain current of 3.6A at 25°C.
  • Ultra-low on-resistance of 76mΩ at 4.5V.
  • Compact 3-LGA package with 0.22mm height.
  • Integrated ESD protection for robust operation.
  • Logic-level gate drive for 1.8V and 4.5V.

CSD25501F3 Applications

  • Ideal for load switching in portable devices.
  • Used in battery protection circuits.
  • Suitable for power management in wearables.
  • Can be used in DC-DC converter applications.

CSD25501F3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the CSD25501F3?

The CSD25501F3 comes in a 3-XFLGA (PICOSTAR YJN) surface mount package, also known as 3-LGA (0.73x0.64).

What is the operating temperature range of the CSD25501F3?

The operating temperature range is -55°C to 150°C.

Is the CSD25501F3 RoHS compliant?

Yes, the CSD25501F3 is RoHS3 compliant and lead-free.

What is the maximum drain current of the CSD25501F3?

The maximum drain current is 3.6A at TC=25°C.

What is the on-resistance of the CSD25501F3?

The maximum on-resistance is 76mΩ at VGS=4.5V and 125mΩ at VGS=2.5V.

Does the CSD25501F3 have ESD protection?

Yes, it includes an integrated ESD protection diode.

What is the gate threshold voltage of the CSD25501F3?

The typical gate threshold voltage is -0.75V, with a maximum of 1.05V at ID=250µA.

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