| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
62,000 pcs
|
62000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
61,440 pcs
|
61440 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
CSD25480F3 is a P-Channel MOSFET from Texas Instruments rated for a maximum drain-source voltage of 20 V and a maximum drain current of 1.7 A at TC=25°C. The device has a maximum gate-source voltage of -12 V and a typical gate threshold voltage of -0.95 V. It is logic-level compatible and supports a gate drive range of 1.8 V to 8 V.
The on-resistance is 159 mΩ maximum at Vgs=4.5V and 260 mΩ maximum at Vgs=2.5V. Total gate charge is 0.7 nC typical (0.91 nC maximum at Vgs=4.5V), with gate-drain charge of 0.1 nC and gate-source charge of 0.26 nC. Input capacitance is 155 pF maximum at Vds=10V. An integrated ESD protection diode is included.
The MOSFET is housed in a 3-PICOSTAR (3-XFDFN) surface-mount package measuring 0.73 mm × 0.64 mm with a maximum height of 0.36 mm. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 500 mW at Ta. The device is lead-free, halogen-free, and RoHS compliant.
According to Texas Instruments, the P-Channel FemtoFET MOSFET is designed to minimize footprint in handheld and mobile applications, providing a substantial reduction in board area compared with standard small-signal MOSFETs. Typical uses include load switching and power management in space-constrained portable devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.36 | $0.36 |
| 10+ | $0.22 | $0.22 |
| 100+ | $0.14 | $0.14 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.09 | $0.09 |
| 3,000+ | $0.08 | $0.08 |
| 6,000+ | $0.07 | $0.07 |
| 9,000+ | $0.06 | $0.06 |
| 24,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
-55°C to 150°C.
3-PICOSTAR (3-XFDFN) surface-mount package, measuring 0.73 mm × 0.64 mm with a maximum height of 0.36 mm.
The manufacturer page states it is RoHS3 compliant and lead-free.
159 mΩ maximum.
Yes, it is logic-level compatible with a gate drive range of 1.8V to 8V.
Yes, it has an integrated ESD protection diode.