CSD25401Q3 P-Channel MOSFET from Texas Instruments with 20V drain-source voltage, 60A continuous drain current, and low on-resistance of 8.8 mOhm at 4.5V. Surface mount package 8-VSON-CLIP.
Mfr Part #:

CSD25401Q3

Available from 8 distributors
Mfr Name: Texas Instruments
Texas Instruments
P-Channel MOSFET from Texas Instruments with 20V drain-source voltage, 60A continuous drain current, and low on-resistance of 8.8 mOhm at 4.5V. Surface mount package 8-VSON-CLIP.
✓ Total Stock: 192,951 pcs

CSD25401Q3 Available from 8 distributors

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CSD25401Q3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD25401Q3 Description

Short technical summary and product information.

The CSD25401Q3 is a P-Channel power MOSFET from Texas Instruments, part of the NexFET family. It features a drain-source voltage rating of 20V and a continuous drain current of 60A at case temperature 25°C (14A at ambient). The device offers low on-resistance: typically 8.8 mOhm at Vgs=4.5V and 13.5 mOhm at Vgs=2.5V, with maximum values of 11.7 mOhm and 18.2 mOhm respectively. Gate charge is low at 8.8 nC typical, enabling efficient switching.

 

This MOSFET is designed for power conversion applications such as DC-DC converters, battery management, and load switching. It is housed in a compact 8-PowerTDFN package (8-VSON-CLIP, 3.3x3.3mm) with surface mount mounting. The package offers low thermal resistance for effective heat dissipation.

 

The device is RoHS compliant, halogen free, and has Pb-free terminal plating. Operating junction temperature range is -55°C to 150°C. It is suitable for high-efficiency power management in space-constrained designs.

CSD25401Q3 Quick Information

Product Type: P-Channel Power MOSFET
Series: NexFET
Canonical Name: CSD25401Q3 P-Channel MOSFET
Subcategory: Single MOSFET

CSD25401Q3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD25401Q3 Features

  • Ultra low gate charge Qg and Qgd.
  • Low on-resistance: 8.8 mOhm typical.
  • Rated for 20V drain-source voltage.
  • High continuous drain current: 60A.
  • Surface mount 8-VSON-CLIP package.

CSD25401Q3 Applications

  • Ideal for DC-DC converter circuits.
  • Used in battery management systems.
  • Suitable for load switch applications.
  • Battery protection circuits.

CSD25401Q3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V.

What package is the CSD25401Q3 available in?

8-PowerTDFN (8-VSON-CLIP, 3.3x3.3mm).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the CSD25401Q3 RoHS compliant?

Yes, RoHS3 compliant.

What is the maximum continuous drain current?

60A at case temperature 25°C, 14A at ambient.

What is the typical gate charge?

8.8 nC at Vgs=4.5V.

What is the on-resistance at 4.5V gate drive?

Typical 8.8 mOhm, maximum 11.7 mOhm at 10A.

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