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CSD25310Q2 CSD25310Q2 is a P-Channel NexFET power MOSFET from Texas Instruments. It features 20V drain-source voltage, 20A continuous drain current, and low on-resistance of 23.9mOhm.
Mfr Part #:

CSD25310Q2

Available from 8 distributors
Mfr Name: Texas Instruments
Texas Instruments
CSD25310Q2 is a P-Channel NexFET power MOSFET from Texas Instruments. It features 20V drain-source voltage, 20A continuous drain current, and low on-resistance of 23.9mOhm.
✓ Total Stock: 82,099 pcs
$ Price Range: $0.13 - $0.69

CSD25310Q2 Available from 8 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

CSD25310Q2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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CSD25310Q2 Description

Short technical summary and product information.

The CSD25310Q2 is a single P-Channel NexFET power MOSFET from Texas Instruments designed for low-voltage power management applications. It offers a maximum drain-source voltage of 20V and a continuous drain current of 20A at 25°C ambient temperature. The device features a low on-resistance of 23.9mOhm maximum at 5A and 4.5V gate drive, with a logic-level gate threshold voltage of 1.1V maximum.

 

This MOSFET is optimized for battery-operated and space-constrained designs, thanks to its ultra-low gate charge (3.6nC typical) and small footprint. The 6-WSON (2x2mm) package with exposed pad provides excellent thermal performance, with a maximum power dissipation of 2.9W at 25°C. The device is halogen-free, lead-free, and RoHS compliant.

 

Typical applications include load switching, power management in portable electronics, and DC/DC converter circuits. The CSD25310Q2 is rated for operation from -55°C to 150°C junction temperature.

CSD25310Q2 Quick Information

Product Type: P-Channel MOSFET
Series: NexFET
Canonical Name: CSD25310Q2 P-Channel MOSFET
Subcategory: P-Channel MOSFET

CSD25310Q2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD25310Q2 Estimated Pricing

Qty Low High
1+ $0.69 $0.69
10+ $0.43 $0.43
100+ $0.27 $0.27
500+ $0.21 $0.21
1,000+ $0.19 $0.19
3,000+ $0.15 $0.15
6,000+ $0.14 $0.14
9,000+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD25310Q2 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Low on-resistance of 23.9mOhm at 4.5V gate drive.
  • Ultra-low gate charge of 3.6nC typical.
  • Logic level gate drive (1.8V/4.5V).
  • Compact 6-WSON 2x2mm package.

CSD25310Q2 Applications

  • Ideal for battery-powered portable devices.
  • Used in load switching applications.
  • Suitable for power management in space-constrained designs.
  • Excellent for DC/DC converter circuits.

CSD25310Q2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20V.

What package does the CSD25310Q2 come in?

6-WDFN Exposed Pad (6-WSON 2x2mm).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the CSD25310Q2 RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

What is the typical gate charge?

3.6 nC typical at 4.5V.

What is the on-resistance?

23.9 mOhm maximum at 5A, 4.5V.

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